Method of making a contact on a backside of a die

Details Method of making a contact on a backside of a die Method of making a contact on a backside of a die

2006-11-21

2009-06-09

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S629000, C438S637000, C438S638000, C438S639000, C257SE21577, C257SE21586, C257SE21597

Reexamination Certificate

active

07544605

ABSTRACT:
A method of forming a semiconductor device includes forming active circuitry over a semiconductor substrate, wherein the semiconductor substrate has a first major surface and a second major surface and the first active circuitry is formed over the first major surface of the semiconductor substrate. A via is formed within the first semiconductor substrate, wherein the via extends from the first active circuitry to the second major surface of the first semiconductor substrate. A dielectric layer is formed over the second major surface and adjacent the first via. The dielectric layer may include nitrogen and silicon and may be formed by a low pressure, low temperature, or both plasma process.

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