Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Patent
1995-05-18
1998-06-23
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
438172, 438180, 438604, 438605, H01L 21338
Patent
active
057704899
ABSTRACT:
A fabrication method of a compound semiconductor FET that enables to produce source/drain electrodes and a gate electrode at any positions flexibly without increase of the number of necessary process steps. First, a compound semiconductor substructure having on its surface first regions on which source/drain electrodes are formed respectively and a second region on which a gate electrode is formed is prepared. A patterned mask film is then formed on the surface of the substructure. The mask film has first windows for the source/drain electrodes and a second window for the gate electrode. A conductor film is selectively formed on the surface of the substructure using the patterned mask film as a mask. The conductor film contains first parts placed on the first regions through the respective first windows of the mask film and second part placed on the second region through the second window of the mask film. The first parts of the conductor film are in ohmic contact with the surface of the substructure to act as the source/drain electrodes, respectively. The second part of the conductor film is in Schottky contact with the surface of the substructure to act as the gate electrode.
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Bowers Jr. Charles L.
Gurley Lynne A.
NEC Corporation
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