Method of making a charge-coupled device imager which includes a

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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29576R, 148187, 156653, 156657, 156662, 357 15, 357 24, 357 30, 427 84, H01L 21306, B44C 122, C03C 1500, C23F 102

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045486719

ABSTRACT:
A method of making an imager which includes substrate of single crystalline silicon having on one surface of a plurality of spaced detectors arranged in columns and a charge-coupled device between each pair of columns of the detectors. The charge-coupled devices are formed first with the gates of the charge-coupled devices defining detector areas of the substrate surface. A guard-ring is formed in each detector area with the edges of the gates around the detector area defining one edge of the guard-ring so that the guard-rings are aligned with the edges of the surrounding gates. A layer of insulating material is formed over the detector areas with the portion of the insulating layer over the guard-ring being thicker than the remaining portion of the insulating layer. The thinner portion of the insulating layer is removed leaving the thicker portion over the guard-ring region and with an edge of the thicker portion being substantially in alignment with an edge of the guard-ring region. A conductive layer is formed on the exposed portion of the detector areas of the substrate surface with the conductive layer forming a Schottky-barrier junction with the substrate.

REFERENCES:
patent: 3481781 (1969-12-01), Kern
"Design and Performance of 64.times.128 Element PtSi; Schottky-Barrier Infra-Red Charge-Coupled Device (IRCCD) Focal Plane Array", W. F. Kosonocky et al., SPIE, vol. 344, Infrared Sensor Technology (1982), pp. 66-77.
U.S. patent application of W. F. Kosonocky, Ser. No. 616,199, filed Jun. 1, 1984, Entitled "Infra-Red Charge-Coupled Device Image Sensor".

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