Method of making a barrier metal technology for tungsten plug in

Details Method of making a barrier metal technology for tungsten plug in Method of making a barrier metal technology for tungsten plug in

1996-09-24

1998-10-27

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438643, 438653, 438672, 438656, 438654, 438644, H01L 214763

Patent

active

058277773

ABSTRACT:
A method for producing a relatively thin titanium nitride barrier layer in an integrated circuit is presented. The titanium nitride layer may be utilized in a tungsten plug interconnection by providing a semiconductor wafer with a conducting layer covered by an insulating layer. The insulating layer is patterned and etched to form contact holes or vias. A layer of titanium is deposited on the surface of the wafer including the sidewalls and bottom of the via. A relatively thin titanium nitride layer is then formed on the titanium layer. The formation of the titanium nitride layer includes growing titanium nitride by a reaction of a nitrogen-bearing species with the titanium layer. The titanium nitride layer prevents the underlying titanium layer from reacting with the subsequent tungsten layer which is deposited on the wafer to fill the via. The tungsten layer is then etched so that the tungsten remaining forms a plug interconnection between conducting layers.

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patent: 4783248 (1988-11-01), Kohlhase
patent: 4884123 (1989-11-01), Dixit
patent: 4965656 (1990-10-01), Koubuchi
patent: 5225372 (1993-07-01), Savkar et al.
patent: 5227335 (1993-07-01), Holschwandner
patent: 5242860 (1993-09-01), Nulman

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