Method of LPCVD silicon nitride deposition

Details Method of LPCVD silicon nitride deposition Method of LPCVD silicon nitride deposition

1999-01-26

2000-11-14

Nelms, David

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438791, H01L 2131

Patent

active

061470139

ABSTRACT:
A method of LPCVD silicon nitride deposition for decreasing particles is disclosed. First, a silicon nitride layer is formed on a semiconductor substrate by LPCVD. Next, low gas flow rate purging step and cycle purging step are executed sequentially. Finally, the semiconductor substrate is taken out from the LPCVD tube. The key point of this invention is decreasing the gas flow rate of purging and cycle purging by inputting nitrogen gas slowly. Thereby the substrate surface contamination problem induced by conventional method can be avoided.

REFERENCES:
patent: 5663087 (1997-09-01), Yokozawa
patent: 5888579 (1999-03-01), Lun
patent: 5939333 (1999-08-01), Hurlet et al.
patent: 5981404 (1999-11-01), Sheng et al.

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