Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Simultaneous radiation imaging and etching of substrate
Patent
1989-04-24
1992-01-14
Bowers, Jr., Charles L.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Simultaneous radiation imaging and etching of substrate
156635, 156652, 156655, 156656, 156662, G03C 500, H01L 21312, H01L 21306
Patent
active
050810022
ABSTRACT:
The sensitivity of localized photochemical etching to the optical and electrical properties of multilayered semiconductor materials is utilized for selectively etching a laterally extending undercut in a buried layer. The semiconductor body is immersed in a suitable etching solution and a beam of light of appropriate wavelength and intensity is directed onto the semiconductor solution interface. The buried layer has a longer diffusion length for photogenerated carriers than the layers adjacent thereto, casuing carriers to diffuse away from the illuminated region within the buried layer and thereby etch the buried layer laterally, undercutting the adjacent layers.
REFERENCES:
patent: 3341937 (1967-09-01), Dill, Jr.
patent: 3457633 (1969-07-01), Marinace et al.
patent: 4061530 (1977-12-01), Hosack
patent: 4063992 (1977-12-01), Hosack
patent: 4075652 (1978-02-01), Umebachi et al.
patent: 4236296 (1980-12-01), Woolhouse et al.
patent: 4276098 (1981-06-01), Nelson et al.
patent: 4354898 (1982-10-01), Coldren et al.
patent: 4354898 (1982-10-01), Coldren et al.
patent: 4518456 (1985-05-01), Bjorkholm
patent: 4597003 (1986-06-01), Aine et al.
patent: 4692207 (1987-09-01), Bouadma et al.
patent: 4707219 (1987-11-01), Chen
patent: 4758532 (1988-07-01), Yagi et al.
patent: 4769342 (1988-09-01), Yagi et al.
patent: 4783237 (1988-11-01), Aine et al.
patent: 4784722 (1988-11-01), Liau et al.
Podlesnik et al., "Deep-Ultraviolet Induced Wet Etching of GaAs", Appl. Phys. Lett. 45(5), Sep. 1984, pp. 563-565.
Tijburg et al., "Selective Etching of III-V Compounds with Redox Systems", J. Electrochem. Soc; Solid-State Science & Technology, May 1976, pp. 687-691.
Osgood et al., "Localized Laser Etching . . . ", Appl. Phys. Lett. 40(5), Mar. 1982, pp. 391-393.
Logan et al., "Optical Waveguides . . . " J. Appl. Phys., vol. 44(9), Sep. 1973, pp. 4172-4176.
Osgood, Jr. Richard M.
Podlesnik Dragan V.
Ruberto Mark N.
Willner Alan E.
Bowers Jr. Charles L.
Pezzner Ashley I.
The Trustees of Columbia University in the City of New York
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