Method of light induced plating on semiconductors

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S674000, C257SE21586

Reexamination Certificate

active

07955977

ABSTRACT:
Methods of light induced plating of nickel onto semiconductors are disclosed. The methods involve applying light at an initial intensity for a limited amount of time followed by reducing the intensity of the light for the remainder of the plating period to deposit nickel on a semiconductor.

REFERENCES:
patent: 4451969 (1984-06-01), Chaudhuri

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of light induced plating on semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of light induced plating on semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of light induced plating on semiconductors will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2728599

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.