Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2009-04-07
2011-12-13
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21347
Reexamination Certificate
active
08076186
ABSTRACT:
A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3×1020atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam and irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area.
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Office Action issued on Feb. 11, 2011 in the corresponding Korean Application No. 10-2009-30491 (with English Translation).
Fu Poh Ling
Kamimura Takaaki
Lim Eng Soon
Lim Kian Kiat
Nakamura Atsushi
Chaudhari Chandra
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Toshiba Matsushita Display Technology Co., Ltd.
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