Method of ion implanting for tri-gate devices

Details Method of ion implanting for tri-gate devices Method of ion implanting for tri-gate devices

2006-03-31

2008-11-11

Kebede, Brook (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE27112, C257SE29275, C257SE21618, C257SE21633

Reexamination Certificate

active

07449373

ABSTRACT:
A method for ion implanting a tip source and drain region and halo region for a tri-gate field-effect transistor is described. A silicon body is implanted, in one embodiment, from six different angles to obtain ideal regions.

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