Method of integrating stress into a gate stack

Details Method of integrating stress into a gate stack Method of integrating stress into a gate stack

2011-08-23

2011-08-23

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S522000, C257SE29158, C257SE29160

Reexamination Certificate

active

08003503

ABSTRACT:
A method of forming a semiconductor device includes providing a dielectric film on a substrate, depositing a metal-containing gate electrode film over the dielectric film, and modifying a surface layer of the metal-containing gate electrode film by exposing the metal-containing gate electrode film to a process gas containing an oxygen-containing gas, a nitrogen-containing gas, or an oxygen- and nitrogen-containing gas, where a thickness of the modified surface layer is less than a thickness of the metal-containing gate electrode film. The method further includes, heat-treating the modified metal-containing gate electrode film to form a stressed metal-containing gate electrode film that exhibits stress over the substrate.

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