Method of integrating an air gap structure with a substrate

Details Method of integrating an air gap structure with a substrate Method of integrating an air gap structure with a substrate

2009-03-31

2010-12-21

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

C257SE21573

Reexamination Certificate

active

07855123

ABSTRACT:
A method for forming an air gap structure on a substrate is described. The method comprises depositing a sacrificial layer on a substrate, forming an adhesion-promoting layer between the sacrificial layer and the substrate, and depositing a capping layer over the sacrificial layer. The sacrificial layer and the capping layer are patterned and metalized. Thereafter, the sacrificial layer is decomposed and removed through the capping layer.

REFERENCES:
patent: 7666754 (2010-02-01), Toma et al.
patent: 2004/0137728 (2004-07-01), Gallagher et al.
patent: 2008/0038934 (2008-02-01), Vrtis et al.
patent: 2009/0087562 (2009-04-01), Lee et al.

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