Method of inspecting photomask defect

Data processing: measuring – calibrating – or testing – Measurement system in a specific environment – Quality evaluation

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C356S237100, C356S237200, C356S237300, C356S237400, C356S237500, C382S100000, C382S141000, C382S144000, C382S145000, C382S147000, C382S148000, C382S149000, C438S014000, C438S016000, C702S001000, C702S081000, C702S127000, C702S187000, C702S189000, C716S030000, C716S030000, C716S030000

Reexamination Certificate

active

07664614

ABSTRACT:
A method of inspecting defect of a mask is provided. In this method, a database for storing a plurality of virtual simulation models is created. The virtual simulation models are determined by a plurality of factors including an optical effect and a chemical effect during the transferring the pattern of a mask to the photoresist layer on a wafer. A mask defect image is acquired. A simulation contour of the mask defect image is generated from at least one virtual simulation model in the database. Next, the acceptability of the mask is determined.

REFERENCES:
patent: 5886909 (1999-03-01), Milor et al.
patent: 6023328 (2000-02-01), Pierrat
patent: 6578188 (2003-06-01), Pang et al.
patent: 6771807 (2004-08-01), Coulombe et al.
patent: 7003755 (2006-02-01), Pang et al.
patent: 7383530 (2008-06-01), Wang et al.
patent: 7562337 (2009-07-01), Bruce et al.
patent: 2001/0028732 (2001-10-01), Coulombe et al.
patent: 2003/0126581 (2003-07-01), Pang et al.
patent: 2004/0225488 (2004-11-01), Wang et al.
patent: 2005/0226492 (2005-10-01), Ho
patent: 2007/0250805 (2007-10-01), Wang et al.
patent: 2008/0141211 (2008-06-01), Bruce et al.
patent: 11-74326 (1999-03-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of inspecting photomask defect does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of inspecting photomask defect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of inspecting photomask defect will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4164097

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.