Method of inspecting grain size of a polysilicon film

Details Method of inspecting grain size of a polysilicon film Method of inspecting grain size of a polysilicon film

2005-07-26

2005-07-26

Toatley, Jr., Gregory J. (Department: 2877)

Optics: measuring and testing

By polarized light examination

Of surface reflection

Reexamination Certificate

active

06922243

ABSTRACT:
A method of inspecting the grain size of a polysilicon film. A substrate covered by an amorphous silicon layer is provided. Next, the amorphous silicon layer is annealed by a laser beam with a predetermined laser energy density to transfer it to a polysilicon layer. Thereafter, the polysilicon layer is measured by a spectrometer under a predetermined photon energy range to achieve an optical parameter. Finally, the optical parameter is quantized to achieve a determining index, thereby monitoring the grain size of the polysilicon layer.

REFERENCES:
patent: 6128084 (2000-10-01), Nanbu et al.
patent: 2004/0092045 (2004-05-01), Bultman et al.

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