Method of inspecting defect of semiconductor device

Details Method of inspecting defect of semiconductor device Method of inspecting defect of semiconductor device

2008-06-27

2010-10-05

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

C438S018000, C257S048000, C257SE21522, C257SE21531

Reexamination Certificate

active

07807552

ABSTRACT:
A method of inspecting defects in a semiconductor device includes forming a test pattern in a scribe lane region of a semiconductor substrate. The test pattern includes a second conductive layer formed on an isolation layer of the semiconductor substrate. Further, the method includes measuring a current flowing between the second conductive layer and the semiconductor substrate by applying a first voltage between the second conductive layer and the semiconductor substrate. Defects formed in the isolation layer can be inspected during a semiconductor manufacturing process. Accordingly, the yield of semiconductor devices can be improved with the inspection results.

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