Semiconductor device manufacturing: process – With measuring or testing – Optical characteristic sensed
Patent
1996-03-12
1998-04-28
Dutton, Brian
Semiconductor device manufacturing: process
With measuring or testing
Optical characteristic sensed
430 5, 356237, 382144, G01R 3126, H01L 2166, G03F 900, G01N 2100
Patent
active
057443815
ABSTRACT:
A pattern defect inspection apparatus comprises a light irradiating portion, a light receive element, a light receive element amplifier, a preparation portion for preparing multi-valued design pattern image data, an offset adjusting portion, a gain adjusting portion, and an inspecting portion. The offset adjusting portion adjusts the offset of the light receive element amplifier such that measurement data of a translucent portion of a pattern on a sample surface corresponds to design pattern image data corresponding to the translucent portion, regarding the translucent portion as a non-transparent portion. The gain adjusting portion adjusts the gain of the light receive element amplifier such that measurement data of a transparent portion of the pattern on the sample surface corresponds to design pattern image data corresponding to the transparent portion.
REFERENCES:
patent: 4559603 (1985-12-01), Yoshikiawa
patent: 5029222 (1991-07-01), Yamada et al.
patent: 5068799 (1991-11-01), Jarrett, Jr.
patent: 5379348 (1995-01-01), Watanabe et al.
patent: 5404410 (1995-04-01), Tojo et al.
SPIE, Photomask Technology and Management, vol. 2087, pp. 200-215, 1993, D.J. Stolpe, et al., "Die-to Die Inspection of Phase-Shifting Masks".
Tabata Mitsuo
Tojo Toru
Tsuchiya Hideo
Watanabe Toshiyuki
Dutton Brian
Kabushiki Kaisha Toshiba
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