Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-09-12
2006-09-12
Sarkar, Asok K. (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S682000, C438S527000, C438S530000, C438S597000, C438S301000, C257SE21199, C257SE21296, C257SE21636
Reexamination Certificate
active
07105429
ABSTRACT:
A method inhibits metal silicide encroachment in channel regions in a transistor that uses metal silicide as an electrical contact to its terminals. A metal layer is deposited overlying the transistor. A first anneal that is a low temperature anneal forms metal silicide regions to source, gate and drain terminals of the transistor. The low temperature inhibits lateral encroachment. Unsilicided portions of the metal are removed and followed by an ion implant of an element, such as nitrogen, that diffuses into the metal silicide regions. A second anneal at a higher temperature than the first anneal is completed wherein the implanted nitrogen ions prevent lateral encroachment of metal silicide.
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Related U.S. Appl. No. 10/718,892, filed Nov. 21, 2003.
Freescale Semiconductor Inc.
King Robert L.
Noonan Michael P.
Sarkar Asok K.
Yevsikov Victor V.
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