Method of inhibiting degradation of gate oxide film

Details Method of inhibiting degradation of gate oxide film Method of inhibiting degradation of gate oxide film

2006-11-21

2006-11-21

Estrada, Michelle (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257SE51006, C257SE27060

Reexamination Certificate

active

07138324

ABSTRACT:
A method of inhibiting degradation of a transistor gate oxide film by high density plasma is disclosed. After a gate electrode is formed, impurity is implanted on the surface of an oxide film, thereby changing surface characteristics of the oxide film to scatter ultraviolet rays which are factors of degradation of the gate insulating film. Accordingly, the ultraviolet rays are prevented from being permeated into a gate insulating oxide film.

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patent: 11289088 (1999-10-01), None
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patent: 1020030052272 (2003-06-01), None

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