Method of increasing the reactivity of a precursor in a...

Details Method of increasing the reactivity of a precursor in a... Method of increasing the reactivity of a precursor in a...

2011-01-18

2011-01-18

Vinh, Lan (Department: 1713)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S252000, C427S255390, C427S255280, C427S314000, C118S023000, C118S728000

Reexamination Certificate

active

07871678

ABSTRACT:
The present invention relates to an enhanced cyclic deposition process suitable for deposition of barrier layers, adhesion layers, seed layers, low dielectric constant (low-k) films, high dielectric constant (high-k) films, and other conductive, semi-conductive, and non-conductive films. The technique increases the chemical reactivity of a precursor used in the process.

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