Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-10-03
2008-08-26
Lebentritt, Michael S. (Department: 2829)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S710000, C438S711000, C438S717000, C438S723000, C438S733000, C257S774000, C257SE21252, C257SE21256, C257SE21577, C257SE21579, C257SE21495
Reexamination Certificate
active
07416973
ABSTRACT:
By providing an additional silicon dioxide based etch stop layer, a corresponding etch process for forming contact openings for directly connecting polysilicon lines and active areas may be controlled in a highly reliable manner. In another aspect, the etch selectivity of the contact structure may be increased by a modification of the etch behavior of the exposed portion of the contact etch stop layer.
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Peters Carsten
Richter Ralf
Salz Heike
Schaller Matthias
Advanced Micro Devices , Inc.
Lebentritt Michael S.
Williams Morgan & Amerson P.C.
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