Method of increasing the area of a useful layer of material...

Etching a substrate: processes – Forming or treating electrical conductor article – Adhesive or autogenous bonding of self-sustaining preforms

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S455000

Reexamination Certificate

active

07048867

ABSTRACT:
The invention relates to a method of increasing the area of a useful layer of material coming from a source substrate and which is effectively transferred onto a support substrate. The dimensions of the outer outline of one of the source and support substrates, referred to as the “first” substrate, are greater than the dimensions of the outer outline of the other substrate, referred to as the “second” substrate. The outer outline of the flat central zone of the first substrate presents dimensions greater than the dimensions of the outer outline of the flat central zone of the second substrate. During bonding, the substrates are applied one against the other in such a manner that the outline of the flat central zone of the second substrate is disposed within the outline of the flat central zone of the first substrate. The invention is applicable, for example, to fabricating a composite substrate product wafer for use in the fields of electronics, optics, or optoelectronics.

REFERENCES:
patent: 5152857 (1992-10-01), Ito et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5597410 (1997-01-01), Yen
patent: 6429104 (2002-08-01), Auberton-Herve
patent: 6664169 (2003-12-01), Iwasaki et al.
patent: 2001/0055854 (2001-12-01), Nishida et al.
patent: 2003/0008478 (2003-01-01), Abe et al.
patent: 2004/0035525 (2004-02-01), Yokokawa et al.
patent: 2004/0224482 (2004-11-01), Kub et al.
patent: 1 059 663 (2000-12-01), None
patent: 1 189 266 (2002-03-01), None
patent: 06061201 (1994-04-01), None
patent: 10093122 (1998-10-01), None
M.K. Weldon et al., “Mechanism of Silicon Exfoliation by Hydrogen Implantation and He, Li and Si Co-implantation,” Proceedings 1997 IEEE International SOI Conference, Oct., 1997, pp. 124-125.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of increasing the area of a useful layer of material... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of increasing the area of a useful layer of material..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of increasing the area of a useful layer of material... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3564458

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.