Etching a substrate: processes – Forming or treating electrical conductor article – Adhesive or autogenous bonding of self-sustaining preforms
Reexamination Certificate
2006-05-23
2006-05-23
Norton, Nadine G. (Department: 1765)
Etching a substrate: processes
Forming or treating electrical conductor article
Adhesive or autogenous bonding of self-sustaining preforms
C438S455000
Reexamination Certificate
active
07048867
ABSTRACT:
The invention relates to a method of increasing the area of a useful layer of material coming from a source substrate and which is effectively transferred onto a support substrate. The dimensions of the outer outline of one of the source and support substrates, referred to as the “first” substrate, are greater than the dimensions of the outer outline of the other substrate, referred to as the “second” substrate. The outer outline of the flat central zone of the first substrate presents dimensions greater than the dimensions of the outer outline of the flat central zone of the second substrate. During bonding, the substrates are applied one against the other in such a manner that the outline of the flat central zone of the second substrate is disposed within the outline of the flat central zone of the first substrate. The invention is applicable, for example, to fabricating a composite substrate product wafer for use in the fields of electronics, optics, or optoelectronics.
REFERENCES:
patent: 5152857 (1992-10-01), Ito et al.
patent: 5374564 (1994-12-01), Bruel
patent: 5597410 (1997-01-01), Yen
patent: 6429104 (2002-08-01), Auberton-Herve
patent: 6664169 (2003-12-01), Iwasaki et al.
patent: 2001/0055854 (2001-12-01), Nishida et al.
patent: 2003/0008478 (2003-01-01), Abe et al.
patent: 2004/0035525 (2004-02-01), Yokokawa et al.
patent: 2004/0224482 (2004-11-01), Kub et al.
patent: 1 059 663 (2000-12-01), None
patent: 1 189 266 (2002-03-01), None
patent: 06061201 (1994-04-01), None
patent: 10093122 (1998-10-01), None
M.K. Weldon et al., “Mechanism of Silicon Exfoliation by Hydrogen Implantation and He, Li and Si Co-implantation,” Proceedings 1997 IEEE International SOI Conference, Oct., 1997, pp. 124-125.
Norton Nadine G.
S.O.I.Tec Silicon Insulator Technologies S.A.
Tran Binh X.
Winston & Strawn LLP
LandOfFree
Method of increasing the area of a useful layer of material... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of increasing the area of a useful layer of material..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of increasing the area of a useful layer of material... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3564458