Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1982-03-31
1983-08-30
Garris, Bradley
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156DIG66, 156DIG73, C30B 1534, C30B 2906, C30B 3300
Patent
active
044015054
ABSTRACT:
A silicon dendrite is grown as a ribbon forming two silicon crystal layers which are separated by an interface layer which contains a large number of defects. Significant increase of minority carrier lifetime with homogeneous distribution at the outer surfaces of the two silicon crystal layers are achieved by processing the web in an atmosphere of a selected gas, e.g. oxygen, nitrogen or an inert gas, for about 30 minutes to several hours at a temperature preferably on the order of 900.degree. C.-1200.degree. C.
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Biedermann; "Producing Silicon Semiconductor Wafers . . . "; IBM Tech. Bull.; vol. 19; No. 4; p. 1295; Sep. 1976.
"Lifetime Control in Silicon through Impact Sound Stressing" by Schwuttke et al.; Phys. Stat. Sol.; 42; p. 553; Apr. 1977.
"Minority Carrier Lifetime Improvement in Silicon through Laser Damage Gettering" by Yang et al.; Phys. Stat. Sol.; 58; p. 127; Oct. 1979.
"Dislocation Reactions in Silicon Web-Dendrite Crystals" by S. O'Hara et al.; J. Appl. Phys.; vol. 36; No. 8; p. 2475; Aug. 1965.
Koliwad Krishna M.
Liu James K.
Schwuttke Guenter H.
Garris Bradley
Jones Thomas H.
Manning John R.
McCaul Paul F.
The United States of America as represented by the Administrator
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