Method of increasing end point detection capability of reactive

Details Method of increasing end point detection capability of reactive Method of increasing end point detection capability of reactive

1997-09-12

1999-12-21

Chaudhuri, Olik

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

438201, 438257, 438593, H01L 218238

Patent

active

060048298

ABSTRACT:
A method of forming a semiconductor device includes forming of layers of polysilicon and dielectric layers in manufacturing a semiconductor device and patterning the layers into devices using phototlithography and etching process steps. End point mode detection is used in the etching process in a way in which the area exposed during etching is increased to enhance the end point detection capacity, by adding a surplus pad area before pad formation. Specifically an EPROM device is formed with a first level of polysilicon above a gate oxide layer patterned into a floating gate electrode of an EPROM device. Then form an ONO layer above the floating gate electrode. Define array protection, grow a second gate oxide layer, deposit a second level of polysilicon, define peripheral gates from the second level of polysilicon, and define an EPROM transistor gate electrode from the second level of polysilicon.

REFERENCES:
patent: 4598460 (1986-07-01), Owens et al.
patent: 4646425 (1987-03-01), Owens et al.
patent: 4775642 (1988-10-01), Chang et al.
patent: 4784966 (1988-11-01), Chen
patent: 4829024 (1989-05-01), Klein et al.
patent: 5091327 (1992-02-01), Bergemont
patent: 5104819 (1992-04-01), Freiberger et al.
patent: 5208174 (1993-05-01), Mori
patent: 5286667 (1994-02-01), Lin et al.
patent: 5498559 (1996-03-01), Chang
patent: 5506159 (1996-04-01), Enomoto
patent: 5527727 (1996-06-01), Kim
patent: 5663084 (1997-09-01), Yi et al.
patent: 5693972 (1997-12-01), Liu
patent: 5705419 (1998-01-01), Perry et al.
patent: 5731243 (1998-03-01), Peng et al.
patent: 5840595 (1998-11-01), Kobayashi
patent: 5892276 (1999-04-01), Miki et al.

Affiliated with

Also associated with

Rating

Method of increasing end point detection capability of reactive does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of increasing end point detection capability of reactive , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of increasing end point detection capability of reactive will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-504280