Method of increasing contact area of a contact window

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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Details

438627, 438643, 438648, 438664, 438682, 438724, H01L 21283, H01L 21306

Patent

active

061366986

ABSTRACT:
A method is provided to increase the contact area of a contact window. In this method, the contact area is mainly increased by a concavity which is formed by first forming a thin oxide layer in the contact region using local oxidation, then further by removing the thin oxide layer. Additionally, in order to reduce the contact resistance, a metal oxide layer can be selectively formed at the contact interface.

REFERENCES:
patent: 4901134 (1990-02-01), Misawa et al.
patent: 5567651 (1996-10-01), Berti et al.
patent: 5739573 (1998-04-01), Kawaguchi
patent: 5744855 (1998-04-01), Maki et al.
patent: 5750438 (1998-05-01), Hsue et al.

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