Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1999-06-04
2000-10-24
Smith, Matthew
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438627, 438643, 438648, 438664, 438682, 438724, H01L 21283, H01L 21306
Patent
active
061366986
ABSTRACT:
A method is provided to increase the contact area of a contact window. In this method, the contact area is mainly increased by a concavity which is formed by first forming a thin oxide layer in the contact region using local oxidation, then further by removing the thin oxide layer. Additionally, in order to reduce the contact resistance, a metal oxide layer can be selectively formed at the contact interface.
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patent: 5739573 (1998-04-01), Kawaguchi
patent: 5744855 (1998-04-01), Maki et al.
patent: 5750438 (1998-05-01), Hsue et al.
Anya Igwe Uma
Huang Jiawei
Patents J. C.
Smith Matthew
United Integrated Circuits Corp
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