Semiconductor device manufacturing: process – Including control responsive to sensed condition – Optical characteristic sensed
Reexamination Certificate
2006-11-07
2006-11-07
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
Optical characteristic sensed
C438S014000, C438S513000, C257SE21210, C257SE21525
Reexamination Certificate
active
07132302
ABSTRACT:
A method of increasing the cell retention capacity of a silicon nitride read-only-memory on a wafer. The method includes carrying out a baking process after performing the last plasma treatment of the wafer but before a wafer sort test.
REFERENCES:
patent: 6417053 (2002-07-01), Kuo
patent: 6469342 (2002-10-01), Kuo et al.
patent: 6580630 (2003-06-01), Liu et al.
patent: 6869844 (2005-03-01), Liu et al.
patent: 6881619 (2005-04-01), Lee et al.
Chen Jiong-Zhong
Chuang Kuen-Chi
Liu Chen-Chin
Jiang Chyun LP Office
Macronix International Co. Ltd.
Nhu David
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