Method of in-situ cleaning of a chuck within a plasma chamber

Details Method of in-situ cleaning of a chuck within a plasma chamber Method of in-situ cleaning of a chuck within a plasma chamber

1997-01-15

1999-06-15

Smith, Lynette F.

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

216 59, 216 67, 216 69, 438905, B44C 122

Patent

active

059118334

ABSTRACT:
A method for in-situ cleaning of a chuck that bears a semiconductor wafer in a semiconductor manufacturing machine maintains a processing chamber in a sealed condition with the chuck inside the chamber. A wafer bearing surface of the chuck is exposed upon determining that the chuck requires a cleaning. A cleaning gas is then injected into the chamber and RF power is applied to the chamber to create a plasma that cleans the wafer bearing surface. Since the processing chamber is maintained in a sealed condition during the in-situ cleaning of the chuck, the time required to clean the chuck and prepare the chamber for continued production runs is greatly reduced.

REFERENCES:
patent: 5192849 (1993-03-01), Moslehi
patent: 5207836 (1993-05-01), Chang
patent: 5417826 (1995-05-01), Blalock
patent: 5689275 (1997-11-01), Moore et al.

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