Method of impurity gettering

Details Method of impurity gettering Method of impurity gettering

1994-06-09

2000-11-07

Niebling, John F.

Semiconductor device manufacturing: process

Gettering of substrate

By layers which are coated, contacted, or diffused

438143, 438473, H01L 21322

Patent

active

061436305

ABSTRACT:
A method of gettering impurities from substrates (304) such as CdTe and CdZnTe by formation of liquid droplets (306) of a lower melting point material such as Cd or Te on the substrate during an anneal. The droplets may form from the melting of a thin layer of the material which had been deposited on the substrate (304). A subsequent mechanical removal of the cooled and solidified droplets also removes the gettered impurities.

REFERENCES:
patent: 2784121 (1957-03-01), Fuller
patent: 3146204 (1964-08-01), Aven
patent: 3549434 (1970-12-01), Aven
patent: 3650823 (1972-03-01), Mead
patent: 3795547 (1974-03-01), Hall
patent: 4244753 (1981-01-01), Harnack
patent: 4504334 (1985-03-01), Schaake

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