Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-06-05
2007-06-05
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S694000, C438S672000, C438S681000, C257SE21257, C257SE21026, C257SE21259
Reexamination Certificate
active
10992668
ABSTRACT:
An isotropic-diffusion filling method uses a thermal process on a result structure comprising a photoresist layer and an organic material layer to create a cross-linking layer there between, which minimizes step height differences between isolated and dense via-pattern regions for optimizing a subsequent trench process and simplifying process steps.
REFERENCES:
patent: 6486058 (2002-11-01), Chun
patent: 6645851 (2003-11-01), Fu et al.
patent: 6767833 (2004-07-01), Shih et al.
patent: 7094711 (2006-08-01), Chang et al.
Chen Kuei-Shun
Lin Chia-Hsiang
Lin Lawrence
Lin Tsung Hsien
Yen Yung-Sung
Anya Igwe U.
Baumeister B. William
Taiwan Semiconductor Manufacturing Co. Ltd.
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