Method of improving uniformity of metal-to-poly capacitors compo

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

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438762, H01L 2170

Patent

active

056588216

ABSTRACT:
A method of forming capacitors comprising polysilicon, polysilicon oxide, metal is described which significantly improves uniformity of capacitance across the silicon integrated circuit wafer and avoids damage to electrical contact regions. A first layer of polysilicon oxide is formed on a polysilicon first capacitor plate. The wafer is then dipped in a buffered oxide etch or subjected to a dry anisotropic etch. The etching conditions the polysilicon layer so that subsequent polysilicon oxide growth is very uniform and controllable. A second polysilicon oxide layer is then formed on the polysilicon first capacitor plate. A layer of silicon nitride is formed on the polysilicon oxide and a second capacitor plate is formed on the layer of silicon nitride completing the capacitor. Improved capacitance uniformity across the wafer is achieved and device damage is avoided.

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