Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1996-09-27
1997-08-19
Nguyen, Tuan H.
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438762, H01L 2170
Patent
active
056588216
ABSTRACT:
A method of forming capacitors comprising polysilicon, polysilicon oxide, metal is described which significantly improves uniformity of capacitance across the silicon integrated circuit wafer and avoids damage to electrical contact regions. A first layer of polysilicon oxide is formed on a polysilicon first capacitor plate. The wafer is then dipped in a buffered oxide etch or subjected to a dry anisotropic etch. The etching conditions the polysilicon layer so that subsequent polysilicon oxide growth is very uniform and controllable. A second polysilicon oxide layer is then formed on the polysilicon first capacitor plate. A layer of silicon nitride is formed on the polysilicon oxide and a second capacitor plate is formed on the layer of silicon nitride completing the capacitor. Improved capacitance uniformity across the wafer is achieved and device damage is avoided.
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Chen Hsin-Pai
Chen Pei-Hung
Ku Sue-Mei
Wei Chih-Shih
Nguyen Tuan H.
Prescott Larry J.
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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