Semiconductor device manufacturing: process – Making device array and selectively interconnecting – Using structure alterable to conductive state
Patent
1996-06-10
2000-08-15
Whitehead, Jr., Carl
Semiconductor device manufacturing: process
Making device array and selectively interconnecting
Using structure alterable to conductive state
438762, 438769, 438956, 438600, H01L 2182
Patent
active
061035556
ABSTRACT:
The reliability of an antifuse can be increased and/or the thickness of the antifuse dielectric can be decreased by the use of a rapid thermal nitridation nitride layer as part of the antifuse dielectric. The RTN nitride layer is denser and has fewer pinholes than nitride layers formed by chemical vapor deposition. The rapid thermal nitridation also produces a good contact with a bottom electrode containing silicon as well as providing a nucleation layer for any additional nitride layer formed by chemical vapor deposition. Increasing the reliability of the antifuse dielectric allows it to be thinner, and thus allows for the programming of the dielectric layer at lower programming voltages.
REFERENCES:
patent: 4581622 (1986-04-01), Takasaki et al.
patent: 5032545 (1991-07-01), Doan et al.
patent: 5106773 (1992-04-01), Chen et al.
patent: 5258333 (1993-11-01), Shappir et al.
patent: 5412244 (1995-05-01), Hamdy et al.
patent: 5422291 (1995-06-01), Clementi et al.
patent: 5478765 (1995-12-01), Kwong et al.
patent: 5550400 (1996-08-01), Takagi et al.
patent: 5610084 (1997-03-01), Solo De Zaldivar
patent: 5661071 (1997-08-01), Chor
patent: 5705849 (1998-01-01), Zheng et al.
patent: 5856234 (1999-01-01), Chiang et al.
patent: 5866938 (1999-02-01), Takagi et al.
Lo, G.Q., et al.; "Highly Reliable SiO.sub.2 /Si.sub.3 N.sub.4 Stacked Dielectric on Rapid-Thermal-Nitrided Rugged Polysilicon for High-Density DRAM's"; IEEE Electron Device Letters; vol. 13, No. 7; Jul. 1992; pp. 372-374.
Ando, K., et al.; "Ultrathin Silico Nirtride Capacitors Fabricated by in Situ Rapid Thermal Multi-processing for 256 Mb DRAM Cells"; ULSI Device Development Laboratories, NEC Corporation; 4B-3; pp. 47-48.
Duong Khanh
Integrated Device Technology Inc.
Jr. Carl Whitehead
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