Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-10-09
2000-09-19
Everhart, C.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438688, 438677, H01L 2144
Patent
active
061211400
ABSTRACT:
A method of producing a thick metal film on a substrate surface with a substantially smooth surface morphology and low resistivity. A substrate is exposed to a plasma. A first thin metal film is deposited on the substrate by chemical vapor deposition. The substrate with the film deposited thereon is exposed to a plasma, and a second thin metal film is deposited on top of the first film. The substrate may undergo subsequent cycles of plasma exposure and film deposition until a desired film thickness is obtained. The resulting film has a smooth surface morphology and low resistivity.
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Arena Chantal
Bertram Ronald T.
Guidotti Emmanuel
Hillman Joseph T.
Everhart C.
Tokyo Electron Limited
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