Method of improving silicon crystal perfection in silicon on sap

Details Method of improving silicon crystal perfection in silicon on sap Method of improving silicon crystal perfection in silicon on sap

1980-03-17

1981-07-21

Lutter, Frank W.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148175, 156DIG64, 423349, 427 95, C30B 2502, C30B 2906

Patent

active

042796881

ABSTRACT:
A process for forming a relatively defect free layer of silicon on an insulating substrate wherein as soon as growth islands are formed on the substrate, to a point just prior to the complete coverage of the substrate with silicon, the formation of the layer is temporarily terminated. The growth islands are maintained at a given temperature for a predetermined period, to allow any defects, which may have started during the initial formation of the growth island, to be self-cured or to annihilate themselves. Thereafter, the growth of silicon is continued until the desired layer thickness is achieved.

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Abrahams et al., "Early Growth of Silicon on Sapphire", Dec. 1976, published in J. of Applied Physics, vol 47, .andgate. 12, pp. 5139-5151.
Chaudhari et al., "Annealing to Fill Cracks in Thin Films", Feb. 1973 published in IBM Tech. Disclosure Bull., vol 15, #9, p. 2697.

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