Method of improving residue and thermal characteristics of...

Details Method of improving residue and thermal characteristics of... Method of improving residue and thermal characteristics of...

2006-09-26

2006-09-26

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S591000, C438S663000

Reexamination Certificate

active

07112529

ABSTRACT:
Disclosed herein is a method of improving residue and thermal characteristics of a semiconductor device. The method comprises the steps of a) depositing nickel and cobalt layers sequentially on a silicone substrate having a transistor formed thereon, b) depositing a capping layer on the cobalt layer, c) forming a silicide layer from the cobalt and nickel layers deposited on the silicone substrate by heat treatment, and d) wet etching to remove a residue. As the silicide layer is formed by additionally deposing the capping layer of titanium nitride on triple layers of silicone, cobalt and nickel, thermal stability for a thermal process performed when forming the silicide is ensured, and as resistance caused by an etchant is eliminated by the subsequent etching process, the residue is completely removed.

REFERENCES:
patent: 6117793 (2000-09-01), Tang
patent: 6274470 (2001-08-01), Ichimori et al.
patent: 6383922 (2002-05-01), Zhang et al.
patent: 6828236 (2004-12-01), Lee
patent: 2002/0142616 (2002-10-01), Giewont et al.
patent: 2004/0007724 (2004-01-01), Murthy et al.

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