Method of improving post-develop photoresist profile on a...

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

Reexamination Certificate

active

07611758

ABSTRACT:
A method and apparatus for improving the post-development photoresist profile on a deposited dielectric film. The method includes depositing a TERA film having tunable optical and etch resistant properties on a substrate using a plasma-enhanced chemical vapor deposition process and post processing the TERA film using a plasma process. The apparatus includes a chamber having an upper electrode coupled to a first RF source and a substrate holder coupled to a second RF source; and a showerhead for providing multiple precursors and process gasses.

REFERENCES:
patent: 4951601 (1990-08-01), Maydan et al.
patent: 5776834 (1998-07-01), Avanzino et al.
patent: 5883001 (1999-03-01), Jin et al.
patent: 6074488 (2000-06-01), Roderick et al.
patent: 6108463 (2000-08-01), Herron et al.
patent: 6238160 (2001-05-01), Hwang et al.
patent: 6287959 (2001-09-01), Lyons et al.
patent: 6316167 (2001-11-01), Angelopoulos et al.
patent: 6380611 (2002-04-01), Yin et al.
patent: 6410462 (2002-06-01), Yang et al.
patent: 6869750 (2005-03-01), Zhang et al.
patent: 6927161 (2005-08-01), Ruelke et al.
patent: 2002/0076843 (2002-06-01), Ruelke et al.
patent: 2002/0106891 (2002-08-01), Kim et al.
patent: 2002/0163028 (2002-11-01), Yuan
patent: 2003/0003768 (2003-01-01), Cho et al.
patent: 2003/0017694 (2003-01-01), Nguyen et al.
patent: 2003/0044621 (2003-03-01), Won et al.
patent: 2003/0203652 (2003-10-01), Bao et al.
patent: 2004/0137169 (2004-07-01), Carollo
patent: 2004/0147137 (2004-07-01), Hiraiwa et al.
A. Grill, Journal of Applied Physics 93(2003)1785-1790.
A. Grill, Journal of Applied Physics 93(2003)1758-1790.
Sang-Yun Lee, Journal of Electrochemical Society, 150(1)G58-G61(2003).
C.H.Lin et al., “A study on adhesion and footing issues of HMDSO films as bottom antireflective coating for deep UV lithographies,” Microelectronic Engineering, Elsevier (Netherlands), vol. 57-58, pp. 555-561, (Sep. 2001).
Sang-Yun Lee et al., “Inorganic Si-O-C Antireflection Coating at 193 nm for Cu Dual Damascene Process,” Journal of Electrochemical Society USA, vol. 150 ( No. 1), pp. G58-G61, (Jan. 2003).

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method of improving post-develop photoresist profile on a... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of improving post-develop photoresist profile on a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of improving post-develop photoresist profile on a... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4139443

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.