Method of improving oxide isolation in a semiconductor device

Details Method of improving oxide isolation in a semiconductor device Method of improving oxide isolation in a semiconductor device

1997-07-01

1999-02-02

Fourson, George R.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438446, 438448, H01L 2176

Patent

active

058664670

ABSTRACT:
A silicon substrate has patterned thereon a pad oxide layer and a nitride layer. The exposed surface of the silicon substrate is cleaned of residual oxide, and a layer of oxidizable material such as polysilicon is deposit over the resulting structure. The polysilicon layer is anisotropically etched to form spacers on the side of the nitride layer portions, which are also in contact with the silicon substrate, the etching continuing into the silicon substrate. Field oxidation is then undertaken, with the polysilicon spacers being oxidized, as is a portion of the silicon substrate, the spacers causing initial oxidation during field oxide growth to be removed from the sides of the nitride layer portions, so that encroachment of the oxide under the nitride layer portions is avoided.

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Kenkare, P. et al, "Sensitivity of Field Isolation Profiles to Active Pattern", IEDM, 1993 pp. 479-82.
Roth, S., et al, "Polysilicon Encapsulated Local Oxidation", IEEE Electron Device Letters, vol. 12, No. 3, Mar. 1991, pp. 92-94.
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Cooper, K., et al, "Recessed Polysilicon Encapsulated Local Oxidation", IEEE Electron Device Letters, vol. 12, No. 10, Oct. 1991, pp. 515-517.

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