Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1990-08-24
1992-01-14
Nguyen, Nam X.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419213, 20429803, 20429817, 20429818, C23C 1434
Patent
active
050807722
ABSTRACT:
A bias sputter coating apparatus is provided with a cathode target assembly having a central electrode which is maintainable at an adjustable voltage level which is negative with respect to the chamber anode but positive with respect to the cathode voltage and the bias voltage on the substrate. The apparatus is used to manufacture sputter coated articles such as semiconductor wafers. The method provides that the voltage on the central electrode is adjusted to a level which improves the ion flux distribution uniformity on the substrate. The electrode voltage is generally optimized in the range of from -8 volts to -20 volts.
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Hieronymi Robert
Hurwitt Steven D.
Wagner Israel
Materials Research Corporation
Nguyen Nam X.
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