Method of improving intrinsic gettering ability of wafer

Details Method of improving intrinsic gettering ability of wafer Method of improving intrinsic gettering ability of wafer

2011-05-10

2011-05-10

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Gettering of substrate

By vapor phase surface reaction

C438S471000, C438S473000, C438S143000

Reexamination Certificate

active

07939432

ABSTRACT:
A method of improving the intrinsic gettering ability of a wafer is described. A first annealing step is performed to the wafer at a first temperature in an atmosphere containing at least one of oxygen gas and nitrogen gas. A second annealing step is performed to the wafer, at a second temperature higher than the first temperature, in the atmosphere.

REFERENCES:
patent: 4597804 (1986-07-01), Imaoka
patent: 5674756 (1997-10-01), Satoh et al.
patent: 6190631 (2001-02-01), Falster et al.
patent: 6191010 (2001-02-01), Falster
patent: 6245311 (2001-06-01), Kobayashi et al.
patent: 6361619 (2002-03-01), Falster et al.
patent: 6818569 (2004-11-01), Mun et al.
patent: 589414 (2004-06-01), None
patent: I256086 (2006-06-01), None
Seiichi Isomae et al., “Intrinsic Gettering of Copper in Silicon Wafers” 2002 Journal of the Electrochemical Society, vol. 149, No. 6, pp. G343-347.

Affiliated with

Also associated with

Rating

Method of improving intrinsic gettering ability of wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of improving intrinsic gettering ability of wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of improving intrinsic gettering ability of wafer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2690196