Active solid-state devices (e.g. – transistors – solid-state diode – Alignment marks
Patent
1999-05-03
2000-05-09
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Alignment marks
257431, H01L 23544
Patent
active
060607858
ABSTRACT:
A method and resulting structure for reducing refraction and reflection occurring at the interface between adjacent layers of different materials in a semiconductor device, assembly or laminate during an alignment step in a semiconductor device fabrication process. The method comprises forming a first layer of material, having a first index of refraction, over a substrate of the semiconductor device, assembly or laminate. A corrective layer is formed over the first layer and a second layer, having a second index of refraction, is then formed over the corrective layer. The corrective layer is composed of a material having an intermediate index of refraction between the first index of refraction and the second index of refraction. The method can also be modified to include one or more layers of materials and/or intermediate refraction layers interposed between or above any of the aforementioned adjacent layers. The aforementioned method and resulting structures can be further modified by forming an additional layer of material, having the requisite intermediate index of refraction, over an uppermost layer to further reduce reflection occurring at the interface between the uppermost layer and air. The invention is also directed to semiconductor devices, assemblies or laminates formed through the aforementioned methods and incorporating the aforementioned structures.
REFERENCES:
patent: 4007846 (1977-02-01), Tustison et al.
patent: 4320936 (1982-03-01), Sawamura
patent: 4480331 (1984-10-01), Thompson
patent: 5160957 (1992-11-01), Ina et al.
patent: 5252414 (1993-10-01), Yamashita et al.
patent: 5266511 (1993-11-01), Takao et al.
patent: 5528372 (1996-06-01), Kawashima
patent: 5532871 (1996-07-01), Hashimotoe et al.
patent: 5541037 (1996-07-01), Hatakeyama et al.
patent: 5760483 (1998-06-01), Bruce et al.
patent: 5933743 (1999-08-01), New et al.
Graettinger Thomas M.
New Daryl C.
Clark Sheila V.
Micro)n Technology, Inc.
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