Method of improving adhesion between two dielectric films

Details Method of improving adhesion between two dielectric films Method of improving adhesion between two dielectric films

2005-12-06

2005-12-06

Tran, Minh-Loan (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S675000, C438S677000, C438S902000

Reexamination Certificate

active

06972252

ABSTRACT:
A method of improving adhesion between layers in the formation of a semiconductor device and integrated circuit, and the resultant intermediate semiconductor structure, which include a substrate layer with a low k insulating layer thereover. The low k insulating layer includes a treated surface area of adsorbed gaseous particles. This treated surface area is formed by flowing a gas, preferably, silane, disilane, dichlorosilane, germane or combinations thereof, over a surface of the heated low k insulating layer for adsorption of such gaseous particles onto the heated surface, wherein the insulating layer maintains its original thickness. A capping layer is then deposited directly over the insulating layer wherein the treated surface area of the insulating layer significantly improves adhesion between the insulating layers and the capping layers to prevent delamination therebetween during subsequent processing steps of forming the integrated circuit.

REFERENCES:
patent: 6472335 (2002-10-01), Tsai et al.
patent: 2004/0018748 (2004-01-01), Lu et al.
patent: 2004/0175929 (2004-09-01), Schmitt et al.

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