Method of improving adhesion between thin films

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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216 67, 216 79, 216 64, 1566461, 437228, C23F 100

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active

057140375

ABSTRACT:
Methods for improving adhesion between various materials utilized in the fabrication of integrated circuits. A first method relates to improving adhesion between a silicon nitride layer and a silicon dioxide layer. The method includes treating a surface of the silicon dioxide layer with a nitrogen plasma in a reactive ion etching process prior to depositing the silicon nitride film on the surface of the silicon dioxide layer. A second method relates to improving adhesion between a silicon nitride layer and a polyimide layer. The method includes the step of treating a surface of the silicon nitride layer with a oxygen/argon plasma in a reactive ion etching process prior to depositing the polyimide layer film on the surface of the silicon nitride layer. A third method relates to improving adhesion between a photoresist layer and a metal. The method includes the step of treating a surface of the photoresist layer with a oxygen/argon plasma in a reactive ion etching process prior to depositing the metal on the surface of the photoresist layer.

REFERENCES:
patent: 4987102 (1991-01-01), Nguyen et al.

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