Method of implementing of a reference sample for use in a device

Details Method of implementing of a reference sample for use in a device Method of implementing of a reference sample for use in a device

1996-12-20

1998-11-10

Dutton, Brian

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

438946, H01L 21425

Patent

active

058343644

ABSTRACT:
A reference sample for the calibration of a device for characterizing doses implanted on a wafer, consisting in defining a succession of at least two parallel strips on the wafer. The reference sample is produced by depositing a first implant mask on the wafer according to a pattern leaving a first strip accessible, performing a first ionic implant of a first dose, removing the first implant mask and depositing a second implant mask on the wafer according to a pattern leaving accessible the first strip as well as a second contiguous strip, performing a second ionic implant of a second dose, and removing the second implant mask.

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patent: 4952063 (1990-08-01), Opsal et al.
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patent: 5042952 (1991-08-01), Opsal et al.
patent: 5130271 (1992-07-01), Migita

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