Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2007-06-26
2007-06-26
Wells, Nikita (Department: 2881)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S491100, C250S492200, C250S397000, C250S398000
Reexamination Certificate
active
11135666
ABSTRACT:
An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.
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U.S. Appl. No. 11/417,027, to Adrian Murrell et al.
Edwards Peter
Farley Marvin
Harrison Bernard
Kindersley Peter
Murrell Adrian
Applied Materials Inc.
Boult Wade & Tennant
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