Method of implanting a substrate and an ion implanter for...

Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices

Reexamination Certificate

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Details

C250S491100, C250S492200, C250S397000, C250S398000

Reexamination Certificate

active

11135666

ABSTRACT:
An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.

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U.S. Appl. No. 11/417,027, to Adrian Murrell et al.

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