Method of implanting a non-dopant atom into a semiconductor...

Details Method of implanting a non-dopant atom into a semiconductor... Method of implanting a non-dopant atom into a semiconductor...

2007-08-08

2010-06-15

Bryant, Kiesha R (Department: 2891)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

C257S288000

Reexamination Certificate

active

07737009

ABSTRACT:
A method of forming an isolation trench structure is disclosed, the method includes forming an isolation trench in a semiconductor body associated with an isolation region, and implanting a non-dopant atom into the isolation trench, thereby forming a region to modify the halo profile in the semiconductor body. Subsequently, the isolation trench is filled with a dielectric material.

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