Method of identifying crystal defect region in...

Details Method of identifying crystal defect region in... Method of identifying crystal defect region in...

2011-03-08

2011-03-08

Caputo, Lisa M (Department: 2855)

Thermal measuring and testing

Leak or flaw detection

With heating or cooling of specimen for test

C374S057000

Reexamination Certificate

active

07901132

ABSTRACT:
Provided is a method of identifying crystal defect regions of monocrystalline silicon using metal contamination and heat treatment. In the method, a sample in the shape of a silicon wafer or a slice of monocrystalline silicon ingot is prepared. At least one side of the sample is contaminated with metal at a contamination concentration of about 1×1014to 5×1016atoms/cm2. The contaminated sample is heat-treated. The contaminated side or the opposite side of the heat-treated sample is observed to identify a crystal defect region. The crystal defect region can be analyzed accurately, easily and quickly without the use of an additional check device, without depending on the concentration of oxygen in the monocrystalline silicon.

REFERENCES:
patent: 6869215 (2005-03-01), Yang et al.
patent: 2004/0060825 (2004-04-01), Nagai et al.
patent: 2005/0064703 (2005-03-01), Kondo et al.
patent: 2006/0130738 (2006-06-01), Kurita et al.
patent: 2009/0026068 (2009-01-01), Hongo et al.
patent: 1020040045986 (2004-06-01), None
patent: 102005-0059910 (2005-06-01), None
patent: 1020050067417 (2005-07-01), None

Affiliated with

Also associated with

Rating

Method of identifying crystal defect region in... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of identifying crystal defect region in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of identifying crystal defect region in... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2633196