Method of hydrothermally growing quartz

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

23301R, 23273R, 24 81R, 423339, B01J 1704, C01B 3312

Patent

active

040309665

ABSTRACT:
This invention relates to a method of growing a single quartz crystal stone. In particular, a method for hydrothermally growing a quartz stone from a quartz seed is disclosed. A substantially stress-free quartz stone is grown in an autoclave by clamping a quartz crystal seed plate in a clip so as to permit substantially unobstructed growth of the stone in the plane of the seed plate, and growing at least a portion of the stone through at least one aperture formed in the clip.

REFERENCES:
patent: 1394697 (1921-10-01), Tornsjo
patent: 1415189 (1922-05-01), Oxley
patent: 2066732 (1937-01-01), Kunz
patent: 2537703 (1951-01-01), Randa
patent: 2674520 (1954-04-01), Sobek
patent: 2690107 (1954-09-01), Ludwig
patent: 2923606 (1960-02-01), Hale
patent: 2994593 (1961-08-01), Sullivan
patent: 3623847 (1971-11-01), Gehres

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