Method of hot electron injection programming of a...

Details Method of hot electron injection programming of a... Method of hot electron injection programming of a...

2007-07-03

2007-07-03

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Systems using particular element

Semiconductive

C365S185140, C365S187000, C365S154000, C365S156000

Reexamination Certificate

active

11235834

ABSTRACT:
A non-volatile memory (NVM) cell splits its basic functions, i.e. program, erase, read and control, among a four PMOS transistor structure, allowing independent optimization of each cell function. The cell structure also includes an embedded static random access memory (SRAM) cell that utilizes a latch structure to preprogram data to be written to the cell and a plurality of cascoded NMOS pass gates. The cell structure reduces total programming time and provides the flexibility of programming the entire cell array simultaneously or one row or sector of the array at a time.

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