Method of horizontally growing carbon nanotubes and device...

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

Reexamination Certificate

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C427S249100, C427S309000, C423S447300, C977S726000

Reexamination Certificate

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07115306

ABSTRACT:
Provided are a method of growing carbon nanotubes and a carbon nanotube device. The method includes: depositing an aluminum layer on a substrate; forming an insulating layer over the substrate to cover the aluminum layer; patterning the insulating layer and the aluminum layer on the substrate to expose a side of the aluminum layer; forming a plurality of holes in the exposed side of the aluminum layer to a predetermined depth; depositing a catalyst metal layer on the bottoms of the holes; and growing the carbon nanotubes from the catalyst metal layer.

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Office Action dated Oct. 31, 2005 issued by the Korean Patent Office and English translation.

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