Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2005-03-01
2005-03-01
Kielin, Erik (Department: 2813)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S508000, C438S509000, C438S796000
Reexamination Certificate
active
06861340
ABSTRACT:
A method of heat-treating a nitride compound semiconductor layer, comprising heating a nitride compound semiconductor layer doped with a p-type impurity at a temperature that is at least 200° C. but less than 400° C. for at least 100 minutes.
REFERENCES:
patent: 5306662 (1994-04-01), Nakamura et al.
patent: 5468678 (1995-11-01), Nakamura et al.
patent: 6169297 (2001-01-01), Jang et al.
patent: 6242328 (2001-06-01), Shin
patent: 6268618 (2001-07-01), Miki et al.
patent: 6287947 (2001-09-01), Ludowise et al.
patent: 6319808 (2001-11-01), Ho et al.
patent: 6326294 (2001-12-01), Jang et al.
patent: 6335212 (2002-01-01), Uemura et al.
patent: 6495433 (2002-12-01), Shin
patent: 20020004254 (2002-01-01), Miki
patent: 20020185732 (2002-12-01), Ho et al.
patent: 2-257679 (1990-10-01), None
patent: 5-183189 (1993-07-01), None
patent: 2-540791 (1996-07-01), None
The '662 patent claims priority from ref. AG as filed.
The '678 patent claims priority from ref. AG as filed.
Kananen Ronald P.
Kielin Erik
Rader & Fishman & Grauer, PLLC
Sony Corporation
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