Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Patent
1997-03-26
1999-04-13
Bowers, Charles
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
438795, 438796, 438799, 438778, 438758, 438931, H01L 4108
Patent
active
058937609
ABSTRACT:
A susceptor in a semiconductor wafer heat treatment apparatus holds a wafer such that the wafer is made flat at a heat treatment temperature. In particular, the susceptor is constituted by an elastic platy member which is convex upward with respect to the direction of the gravity. Therefore, when the wafer is subjected to a high-temperature heat treatment, a crystal defect in the wafer can be suppressed.
REFERENCES:
patent: 3861969 (1975-01-01), Ono et al.
patent: 4537244 (1985-08-01), Holden
patent: 5160998 (1992-11-01), Itoh et al.
patent: 5247557 (1993-09-01), Ikeda
patent: 5448096 (1995-09-01), Kohno
patent: 5736226 (1998-04-01), Tanabe et al.
Wolf Stanley, Silicon processing for VLSI Era, vol. 1, pp. 114-117, 1990.
Mikata Yuichi
Yamamoto Akihito
Bowers Charles
Kabushiki Kaisha Toshiba
Nguyen Thanh
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