Method of growth-orientation of a crystal on a device using an o

Details Method of growth-orientation of a crystal on a device using an o Method of growth-orientation of a crystal on a device using an o

1990-10-09

1993-11-23

Chaudhuri, Olik

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156612, 156647, 156662, 156DIG65, 437 83, 437233, 437109, C30B 2500

Patent

active

052640701

ABSTRACT:
Growth-orientation of a crystal on a semiconductor device is achieved by using an oriented seed layer to grow a monocrystalline layer of silicon on an oxide. The oriented seed layer is provided by a regimented layer of silicon precipitates, which are deposited onto a surface of the oxide in a conventional aluminum-silicon deposition process. A film of silicon is deposited onto the oriented seed layer to grow a monocrystalline layer of silicon. The monocrystalline layer of silicon is further coated with an oxide, and a further seed layer is deposited. In this manner, a plurality of monocrystalline layers of silicon can be deposited on and between insulating layers of oxide. The method can be used for the manufacture of silicon-on-oxide transistors, having a low density of crystalline defects.

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