Method of growing thin film on semiconductor substrate and its m

Details Method of growing thin film on semiconductor substrate and its m Method of growing thin film on semiconductor substrate and its m

1996-05-17

1998-05-26

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With a step of measuring, testing, or sensing

117 86, 117202, 438141, 118715, C30B 2516

Patent

active

057558779

ABSTRACT:
In an extremely thin hetero-epitaxial growth film less than 1 .mu.m, the thin film can be grown at high precision by controlling the growth conditions. The method of growing a thin film on a semiconductor substrate comprises the steps of: forming a semiconductor thin film on a surface of a semiconductor substrate; allowing X-rays to be incident upon the thin film now being grown; measuring fluorescent X-rays emitted from the thin film now being grown in accompany with the application of the X-rays; and controlling growth conditions of the thin film on the basis of the measured values.

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